发明名称 |
Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof |
摘要 |
A organic semiconductor field effect transistor that can work in the depletion mode or super-inverse mode, comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate electrode (2), a first semiconductor layer (4) formed on the gate insulation layer (3), a source electrode and a drain electrode (5) formed on the first semiconductor layer (4), and a second semiconductor layer (6) formed on the first semiconductor layer (4) and the source/drain electrodes (5).
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申请公布号 |
US2004150050(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030614987 |
申请日期 |
2003.07.09 |
申请人 |
CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY CHINESE ACADEMY OF SCIENCE |
发明人 |
YAN DONGHANG;ZHANG JIAN;WANG JUN;WANG HAIBO;YAN XUANJUN |
分类号 |
H01L51/05;H01L29/76;H01L29/786;H01L35/24;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L29/76 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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