| 发明名称 |
Semiconductor device manufacturing method for improving adhesiveness of copper metal layer to barrier layer |
| 摘要 |
A method of manufacturing a semiconductor device according to the present invention forms a laminate metal film having a copper metal layer and a barrier metal, and once immerses the laminate metal film in a solution including an organic acid having at least one carboxyl group before a heat treatment, thereby removing from the laminate metal film an oxide which is the source of oxygen that diffuses during the heat treatment. <IMAGE>
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| 申请公布号 |
EP1443551(A2) |
申请公布日期 |
2004.08.04 |
| 申请号 |
EP20040001235 |
申请日期 |
2004.01.21 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
OKADA, NORIO |
| 分类号 |
H01L21/3205;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;H01L21/44;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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