发明名称 |
Process of forming a bottle-shaped trench |
摘要 |
A process of forming a bottle-shaped trench. A semiconductor substrate with a trench is provided, on which a pad layer and hard mask layer are sequentially formed. A dielectric layer is formed on the hard mask layer to fill the trench. Part of the dielectric layer is etched to expose the sidewall of the upper portion of the trench. A spacer is formed on the sidewall. The residual dielectric layer in the trench is removed, and the partial trench not covered by the spacer is etched to a bottle shape.
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申请公布号 |
US6770563(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20030336083 |
申请日期 |
2003.01.03 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HUANG TUNG-WANG;WU CHANG RONG;LIAO CHIEN-MAO;HO HSIN-JUNG |
分类号 |
H01L21/308;H01L21/334;H01L21/8242;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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