发明名称 |
Method for fabricating memory unit with T-shaped gate |
摘要 |
A method for fabricating a memory unit with T-shaped gate. A semiconductor substrate forming a dielectric layer, a first opening, and a second opening is provided in a CMOS process. A silicate glass spacer is formed on the sidewall of the first opening and is thermally oxidized to form a light doped area under the silicate glass spacer. The silicate glass spacer is removed. An insulating spacer is formed on the sidewall of the first opening. A first spacer is formed on a sidewall of the second opening. N-type conducting spacers are formed respectively on sidewalls of the insulating spacer and the first spacer. Gate dielectric layers are formed respectively in the first opening and the second opening. A P-type conducting layer fills with the first opening and the second opening, and a second spacer is formed on a sidewall of a conducting spacer of the second opening.
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申请公布号 |
US6770532(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20030435447 |
申请日期 |
2003.05.09 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHUANG YING-CHENG;HUANG CHUNG-LIN;LIN CHI-HUI |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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