发明名称 |
Metal-oxide-silicon device including nanometer scaled oxide structure to enhance light-emitting efficiency |
摘要 |
A metal-oxide-silicon (MOS) device that at least includes a silicon-based substrate, a nanometer scaled oxide layer formed on the silicon-based substrate and a metal layer formed on the oxide layer, is disclosed. The present invention basically uses a nanometer scaled oxide structure that result in a non-uniform tunneling current to enhance light-emitting efficiency. The manufacturing steps of the MOS device according to the present invention are quite similar to those of conventional MOS device, so the MOS device according to the present invention can be integrated with the current silicon-based integrated circuit chip. Further the application fields of the silicon-based chip and material can be extended. The cost of MOS device can be reduced and its practicality can be increased.
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申请公布号 |
US6770903(B2) |
申请公布日期 |
2004.08.03 |
申请号 |
US20020251890 |
申请日期 |
2002.09.23 |
申请人 |
NATIONAL TAIWAN UNIVERSITY |
发明人 |
LIN CHING-FUH;LIN WEI-FANG;LIANG EIH-ZHE;SU TING-WEI |
分类号 |
H01L21/316;H01L33/04;H01L33/34;H01L33/40;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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