发明名称 |
Method and system for using TMAH for staining copper silicon on insulator semiconductor device cross sections |
摘要 |
A method and system for performing failure analysis on a silicon on insulator (SOI) semiconductor device is disclosed. The SOI device includes a plurality of conductive structures in a silicon region. The silicon resides on a box insulator, which resides on a silicon substrate. The method and system include providing a cross-section of the SOI semiconductor device. The cross-section of the SOI semiconductor device includes a portion of the plurality of conductive structures. The method and system also include staining the cross-section of the SOI semiconductor device using a stain. The stain etches the silicon region in the SOI semiconductor device without etching a remaining portion of the SOI semiconductor device not composed of silicon.
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申请公布号 |
US6770512(B1) |
申请公布日期 |
2004.08.03 |
申请号 |
US20020316592 |
申请日期 |
2002.12.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MAHANPOUR MEHRDAD;MASOODI MOHAMMAD;TRACY BRYAN M. |
分类号 |
H01L21/762;H01L21/84;H01L27/12;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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