| 发明名称 |
Negative resist process with simultaneous development and silylation |
| 摘要 |
The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.
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| 申请公布号 |
US6770423(B2) |
申请公布日期 |
2004.08.03 |
| 申请号 |
US20020186660 |
申请日期 |
2002.07.01 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROTTSTEGGE JOERG;KUEHN EBERHARD;HERBST WALTRAUD;ESCHBAUMER CHRISTIAN;HOHLE CHRISTOPH;FALK GERTRUD;SEBALD MICHAEL |
| 分类号 |
G03F7/32;G03F7/40;(IPC1-7):G03F7/00;G03C1/492 |
主分类号 |
G03F7/32 |
| 代理机构 |
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