发明名称 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 THE FIRST PROCESS FOR PROCUCING A SEMICONDUCTOR DEVICE ACCORDING TO THE INVENTION COMPRISES THE STEPS OF :@PRIVIDING A WAFER OF GIVEN THICKNESS HAVING A SURFACE FURNISHED WITH SEMICONDUCTOR CIRCUITS AND A BACK;@FORMING GROOVES OF A CUT DEPTH SMELLER THAN THE THICKNESS OF THE WAFER,SAID GROOVES EXTENDING FROM THE WAFER CIRCUIT SURFACE;@STICKING A SURFACE PROTECTIVE SHEET ONTO THE WAFER CIRCUIT SURFACE ;@GRINDING THE BACK OF THE WAFER SO THAT THE THICKNESS OF THE WAFER IS REDUCED TO THEREBY FINALLY RESULT IN DIVISION OF THE WAFER INTO INDIVIDUAL CHIPS WITH SPACES THEREBETWEEN;@STICKINGA A PRESSURE SENSITIVE ADHESIVE SHEET FOR PICKUP STEP ONTO THE GROUND BACK OF THE WAFER, SAID PRESSURE SENSETIVE ADHESIVE SHEET FOR PICKUP STEP COMPRISING A BASE AND,SUPERIMPOSED THEREON, AN ENERGY RADIATIONCURABLE PRESSURE SENSITIVE ADHESIVE LAYER;@EXPOSING THE ENERGY RADIATION CURABLE PRESSURE SENSITIVE ADHESIVE TO AN ENERGY RADIATION;AND PEELING THE SURFACE PROTECTIVE SHEET FROM THE WAFER CIRCUIT SURFACE.THIS PROCESS IS ADVANTAGEOUS IN THAT CHIP ALIGNMENT IS EXCELLENT TO THEREBY ENABLE ENHANCING CHIP PICKUP EFFICIENCY.
申请公布号 MY117750(A) 申请公布日期 2004.07.31
申请号 MY2001PI04113 申请日期 2001.08.30
申请人 LINTEC CORPORATION 发明人 TAKASHI SUGINO;HIDEO SENOO;KAZUHIRO TAKAHASHI
分类号 H01L21/52;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78 主分类号 H01L21/52
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