POLYCRYSTALLINE SILICON TFT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A polycrystalline silicon TFT and a fabricating method thereof are provided to improve a surface state of an active layer by patterning the active layer without forming a contact state between the active layer and a photoresist. CONSTITUTION: A polycrystalline silicon layer is formed on an upper surface of a glass substrate(200). A hard mask material is deposited on the polycrystalline silicon layer. A photoresist pattern is formed on the hard mask material. An active layer(225) and a hard mask(235) are formed by etching simultaneously the polycrystalline silicon layer and the hard mask material. A gate insulating layer(250) is deposited on the glass substrate.