| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to avoid deteriorating a junction leakage by forming silicide after an oxide layer is completely eliminated. CONSTITUTION: A semiconductor substrate(10) is prepared in which a salicide region having a logic device cell and a non-salicide region having an input/output circuit of a logic device are defined. A process for forming a logic device cell in the salicide region is performed. After a process for forming the input/output circuit of the logic device in the non-salicide region is performed, an oxide layer pattern(80a) is formed to expose a part of the non-salicide region. An oxide layer growth process is performed to completely eliminate the oxide layer remaining at the lower corner of the oxide layer pattern in forming the oxide layer pattern. A wet etching process is performed to remove the grown oxide layer. A cobalt thin film and a capping layer are formed on the semiconductor substrate including the logic device cell region. A heat treatment process is performed to form silicide on the exposed substrate in the non-salicide region and the salicide region and on a gate electrode(40) of the logic device cell.
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