| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer which can be protected against damage even when the semiconductor wafer is made as thin as≤200μm. SOLUTION: The method for manufacturing a semiconductor wafer comprises a first step for thermally pasting a semiconductor wafer to a supporting substrate through a polyimide film exhibiting a tack performance of 1-100 g/ϕ5 measured for the circuit forming surface of the semiconductor wafer based on ASTM-D2979-71(77), a second step for grinding the non-circuit forming surface of the semiconductor wafer, and a step for pasting a die bonding adhesive film to the ground non-circuit forming surface of the semiconductor wafer or a third step including high temperature conditions of metal sputtering and metal alloy. COPYRIGHT: (C)2004,JPO&NCIPI |
