| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF |
| 摘要 |
<p>The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.</p> |
| 申请公布号 |
AU2003215959(A1) |
申请公布日期 |
2004.07.29 |
| 申请号 |
AU20030215959 |
申请日期 |
2003.03.26 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JAE-GAB LEE;CHANG-OH JEONG;MYUNG-MO SUNG;HEE-JUNG YANG;BEOM-SEOK CHO |
| 分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L51/20;H01L29/78 |
主分类号 |
G02F1/1362 |
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