METHOD AND APPARATUS FOR PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method which allows the etching of an organic material film with high selectivity against an adjacent inorganic material film and with high uniformity in electron density and plasma density.

SOLUTION: In a chamber 1, a pair of electrodes 2 and 16 are located to face each other. With a processed substrate W having the organic material film supported on the electrode 2, high-frequency power of a frequency of 40 MHz or above for forming a plasma is applied to the electrode 2 to generate a high-frequency electric field between the pair of electrodes 2 and 16. At the same time, processing gas including ionization accelerating gas such as Ar is supplied into the chamber 1 to produce a plasma of the processing gas. Using the plasma, the organic material film of the processed substrate W is plasma-etched with the inorganic material film as a mask.

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