| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron ray apparatus whose secondary electron transmission in a secondary optical system is large and beam focusing is sharp, and to provide a manufacturing method for a semiconductor device in which high precision inspection can be carried out by checking a detected picture that has little aberration. <P>SOLUTION: For solving the above problem, the electron ray apparatus 10 detects an expanded image of an electronic image which is formed by a secondary electron ray emitted from an inspection object testpiece 34 whose surface 34a is irradiated by primary electrons emitted from an electron gun 12. A NA aperture 40 is arranged on a common path of the primary and the secondary electron rays, and an electron lens 32 is arranged near the testpiece surface 34a, wherein a crossover point which is formed by the electron gun 12, the electron lens 32 and the NA aperture 40 are in conjugate relations with the primary electron ray respectively. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
