| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing an artificial crystal having a low dislocation density by etching a seed crystal before growing to introduce an etch channel and thereby to reduce strain in the seed crystal, and provide the artificial crystal produced by the method. SOLUTION: This growing method comprises applying a hydrothermal method and reducing strain in the seed crystal by etching the seed crystal before growing to introduce the etch channel. By the above method, the artificial crystal having a low linear defect density can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI
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