| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer by which a damage hardly occurs at the outer periphery part of a semiconductor wafer due to contact of a wafer holding hole with an inner peripheral wall in the case of wafer flat work. <P>SOLUTION: On the outermost peripheral surface of a silicon wafer W, a protective coat Wa is formed. Thus, even when the outermost peripheral surface of the silicon wafer W is brought into contact with the inner peripheral wall of the wafer holding hole 12 during wrapping, what the outermost peripheral surface actually brought into contact with is the protective coat Wa. Thus, the damage due to wearing hardly occurs at the outer periphery part of a semiconductor wafer. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
