| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To disclose a technology that can independently control bank interleave by realizing a memory interleave structure using a nonvolatile ferroelectric register in particular about an interleave controller using a nonvolatile ferroelectric memory. <P>SOLUTION: This interleave controller using the nonvolatile ferroelectric memory can independently control interleave of each bank by utilizing the nonvolatile ferroelectric register with a single nonvolatile ferroelectric memory chip, a multi-bank nonvolatile ferroelectric memory chip or a multi-bank interleave nonvolatile ferroelectric memory chip. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
