SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To suppress degradation in manufacturing yield caused by a water mark by preventing the water mark from remaining on the surface of a silicon polycrystal film. SOLUTION: An i-silicon polycrystal film 5b is continuously formed where an impurity of relatively low concentration as 2×1020cm-3or low is introduced in the upper layer of a d-silicon polycrystal film 5a, in which an impurity of relatively high concentration as 1020cm-3or higher is introduced. So, in the next wet cleaning process, the surface of the i-silicon polycrystal film 5b whose impurity concentration is relatively low is wet-cleaned, to suppress occurrence of a water mark. Thus, defective processes such as abnormal appearance and residual after etching of d- and i-silicon polycrystal films 5a and 5b is prevented after the d- and i-silicon polycrystal films 5a and 5b are etched, to suppress degradation in manufacturing yield. COPYRIGHT: (C)2004,JPO&NCIPI