FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a flash memory device capable of generating uniform voltage drop by a source line regardless of the number of memory cells to be programmed and a method of programming the flash memory device.

SOLUTION: The flash memory device is provided with a memory cell array provided with n×i×2m memory cells and a dummy array provided with 2m transistors having a gate connected to each of 2m word lines, a source connected to each of m source lines and a drain connected to at least one dummy bit line, wherein in a program operation, current obtained by totaling bias current caused to flow from source lines to bit lines and bias current caused to flow from the source lines to at least one dummy bit line in response to n pieces of input data is identical to bias current caused to flow from the source lines to n bit lines when n memory cells of the memory cell array are programmed.

COPYRIGHT: (C)2004,JPO&NCIPI