发明名称 IC CHIP PROVIDED WITH BARRIER STRUCTURE, AND DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain improved crack stopping and contaminant barriers for an IC chip. SOLUTION: On-chip overlapped crack end barrier structure is constituted. A conductive material in barrier structure design is used for forming the depth of several conductive layers, by wiring each barrier to a contact pad and a device pin and connecting a monitoring device to a chip. Upper surface deposit, consisting of a material such as polyimide, suppresses peeling off of layers. Other barriers may include structural characteristics for completely shielding moisture absorption and oxidation, as compared with typical crack stopping structure. Thereto, other barriers are constituted so as to give crack stop protection, to be electrically connected to a monitoring device and so as to test the capacitance/resistance of the barrier structure to show the complete states of the barriers to a user. A barrier destroyed by cracks or humidity absorption/oxidation shows deviation in the capacitance/resistance. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004214626(A) 申请公布日期 2004.07.29
申请号 JP20030396313 申请日期 2003.11.26
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 WILLIAM F LANDERS;SHAW THOMAS M;LLERA-HURLBURT DIANA;CROWDER SCOTT W;MCGAHAY VINCENT J;MALHOTRA SANDRA G;DAVIS CHARLES R;RONALD D GOLDBLATT;ENGEL BRETT H
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L23/544;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L23/52
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