发明名称 |
Integrated circuit modification using well implants |
摘要 |
A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed having a well of a first conductivity type under the gate region being disposed adjacent to active regions of a first conductivity type. The well forming an electrical path between the active regions regardless of any reasonable voltage applied to the integrated circuit structure.
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申请公布号 |
US2004144998(A1) |
申请公布日期 |
2004.07.29 |
申请号 |
US20030735841 |
申请日期 |
2003.12.12 |
申请人 |
CHOW LAP-WAI;CLARK WILLIAM M.;BAUKUS JAMES P.;HARBISON GAVIN J. |
发明人 |
CHOW LAP-WAI;CLARK WILLIAM M.;BAUKUS JAMES P.;HARBISON GAVIN J. |
分类号 |
H01L21/8238;H01L27/02;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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