TRANSISTOR, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR INTEGRATED CIRCUIT, AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To manufacture a transistor having a good electrical characteristic by a low-temperature process. SOLUTION: In the manufacturing method of the transistor, a first interface reforming film 11 including a metal film or a semiconductor film is so formed on a substrate 10 as to form successively an insulation film 12 and a semiconductor film 13 on the first interface reforming film 11. Then, the decompositions of gases infiltrated in the insulation film 12 are promoted by a heat treatment, and dangling bonds present in the interface of the rear-surface side of the semiconductor film 13 (the interface present on the reverse side of a gate insulation film 15) are so terminated by the hydrogen radical, etc. generated by the decompositions as to reduce the interfacial-level density of the transistor. COPYRIGHT: (C)2004,JPO&NCIPI