发明名称 Magnetic memory
摘要 A magnetic memory cell is disclosed. The memory cell includes first conductor and second conductors coupled to first and second electrodes of a magnetic element. A plurality of memory cells is interconnected by first and second conductors to form a memory array or block. The second conductor is coupled to the second electrode via a conductive strap having a fuse portion. The fuse portion can be blown to sever the connection between the second conductor and magnetic element, Nitride.
申请公布号 US6768150(B1) 申请公布日期 2004.07.27
申请号 US20030249532 申请日期 2003.04.17
申请人 INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT 发明人 LOW KIA SENG;SCHMID JOERG DIETRICH
分类号 G11C11/16;G11C17/16;G11C29/00;H01L27/22;H01L29/76;(IPC1-7):H01L29/76 主分类号 G11C11/16
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