发明名称 |
Magnetic memory |
摘要 |
A magnetic memory cell is disclosed. The memory cell includes first conductor and second conductors coupled to first and second electrodes of a magnetic element. A plurality of memory cells is interconnected by first and second conductors to form a memory array or block. The second conductor is coupled to the second electrode via a conductive strap having a fuse portion. The fuse portion can be blown to sever the connection between the second conductor and magnetic element, Nitride.
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申请公布号 |
US6768150(B1) |
申请公布日期 |
2004.07.27 |
申请号 |
US20030249532 |
申请日期 |
2003.04.17 |
申请人 |
INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT |
发明人 |
LOW KIA SENG;SCHMID JOERG DIETRICH |
分类号 |
G11C11/16;G11C17/16;G11C29/00;H01L27/22;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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