发明名称 High-frequency amplifier
摘要 A bias circuit is provided for attenuating harmonic distortions of a signal having a simple construction and which can be applied to a high-frequency amplifier used in a communication device, such as a mobile telephone. The circuit reduces a voltage drop therein and thus provides a high-frequency amplifier having reduced power consumption and an increased operating efficiency. The high-frequency amplifier includes an amplifier circuit, an output matching circuit, and the bias circuit. In the bias circuit, a parallel circuit including a first transmission line and a first capacitor has one end connected between the amplifier and the output matching circuit. The other end of the parallel circuit is connected to a power source and is grounded via a second capacitor. In the circuit, the bias circuit can be short-circuited in a desired frequency band while being an open circuit in a frequency band of a signal to be amplified, hence attenuating the harmonic distortions without using a low pass filter.
申请公布号 US6768383(B2) 申请公布日期 2004.07.27
申请号 US20020220113 申请日期 2002.12.04
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KUSHITANI HIROSHI;KATO HISAYOSHI;TSUNEOKA MICHIAKI
分类号 H01P1/00;H01P1/20;H01P1/212;H03F3/60;H03H7/01;H04B1/04;(IPC1-7):H03F3/191 主分类号 H01P1/00
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