发明名称 |
Production of semiconductor structure using anisotropically structured spacer layer with side wall spacers useful in semiconductor technology |
摘要 |
Preparation of a semiconductor structure in which over a semiconductor region with at least one trench (G), a carbon spacer layer (40) is anisotropically structured for removal of the spacer layer from the trench base, so that side wall spacers (40') remain at the trench walls away from the spacer layer (40).
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申请公布号 |
DE10304862(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
DE20031004862 |
申请日期 |
2003.02.06 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GENZ, OLIVER;WEGE, STEPHAN |
分类号 |
H01L21/311;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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