| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask which can improve the total focal depth without increasing the aberration of a reduction projection lens, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: A mask 1 is used for drawing a continuous pattern 2 where the same forms are repeatedly arranged on a transparent substrate. The repeating pitch P of the continuous pattern 2 satisfies the relation of P=(1.5±0.2)×(λ/N), whereinλis the wavelength of the exposure light in an exposure apparatus and N is the rate of reduction projection exposure. The method for manufacturing a semiconductor device includes the processes of: depositing a resist on a semiconductor substrate; subjecting the resist to reduction projection exposure by oblique incidence illumination from a light source through the mask; and developing the resist to form the resist pattern on the semiconductor substrate. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
