| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparatory reducing furnace capable of certainly removing the oxidation film bonded and formed to the surface of a silicon sample at the time of analysis of a very small amount of oxygen contained in the silicon sample, and to provide a pretreatment method for the silicon sample using the same. SOLUTION: In such a state that a graphite crucible 5 housing the silicon sample 15 is provided in an impulse furnace 1, the silicon sample 15 in the graphite crucible 5 is heated at a temperature below the melting point of the silicon sample 15 while supplying an inert gas G to reduce and remove the oxidation film on the surface of the silicon sample 15. COPYRIGHT: (C)2004,JPO&NCIPI
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