发明名称 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND SYSTEM FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device which reduces the possibility that a semiconductor element breaks down with residual charges on a substrate being processed in a process for producing a semiconductor using a stencil mask. SOLUTION: The process for fabricating a semiconductor device comprises a step for irradiating a substrate 12 being processed with charged particles 13 through a stencil mask 11 having an opening disposed oppositely to the substrate 12 being processed, wherein the potential difference between the stencil mask 11 and the substrate 12 being processed is regulated depending on the level of a current flowing between the substrate 12 being processed and the ground. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004207562(A) 申请公布日期 2004.07.22
申请号 JP20020375979 申请日期 2002.12.26
申请人 TOSHIBA CORP 发明人 SHIBATA TAKESHI;MISAWA HISATOKU;SUGURO KYOICHI
分类号 G03F7/20;H01L21/02;H01L21/027;H01L21/266;(IPC1-7):H01L21/027 主分类号 G03F7/20
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