发明名称 |
PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND SYSTEM FOR PRODUCING SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device which reduces the possibility that a semiconductor element breaks down with residual charges on a substrate being processed in a process for producing a semiconductor using a stencil mask. SOLUTION: The process for fabricating a semiconductor device comprises a step for irradiating a substrate 12 being processed with charged particles 13 through a stencil mask 11 having an opening disposed oppositely to the substrate 12 being processed, wherein the potential difference between the stencil mask 11 and the substrate 12 being processed is regulated depending on the level of a current flowing between the substrate 12 being processed and the ground. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004207562(A) |
申请公布日期 |
2004.07.22 |
申请号 |
JP20020375979 |
申请日期 |
2002.12.26 |
申请人 |
TOSHIBA CORP |
发明人 |
SHIBATA TAKESHI;MISAWA HISATOKU;SUGURO KYOICHI |
分类号 |
G03F7/20;H01L21/02;H01L21/027;H01L21/266;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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