| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device in which impurity ions are driven without using a mask for an ion implantation, a cap film free from diffusing impurities is formed, and activation annealing is conducted. SOLUTION: Impurity ions are implanted with the surface of a semiconductor substrate exposed. The outward diffusion of impurities can be prevented in the case of the activation annealing of impurities because the ozone cap film is formed chemically by a method, in which the semiconductor substrate is dipped in ozone water having ozone concentration at 10°C to 100°C of 10 ppm or more for 10 min or longer, and a shower is applied in an ozone treatment. Since impurities are hardly diffused to the ozone cap film even by the activation annealing, the concentration of a diffusion layer is not lowered. COPYRIGHT: (C)2004,JPO&NCIPI
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