发明名称 |
METHOD FOR FORMING TUNGSTEN NITRIDE FILM |
摘要 |
<p>A method for forming tungsten nitride film, which comprises a first raw material gas supply step of supplying a first raw material gas comprising a tungsten compound gas, a reduction step of supplying a reducing gas, a second raw material gas supply step of supplying a second raw material gas comprising a tungsten compound gas, a nitriding step of supplying a nitriding gas. In the method, a step of precipitating tungsten on a substrate(5) and a step of forming tungsten nitride are separately carried out. Consequently, by changing the flow rates of the gasses and the pressure and supply time at the supply of the gasses, or by changing the number of repetitions of the steps and the order, the amount of tungsten precipitated and the amount of tungsten nitride produced are easily controlled.</p> |
申请公布号 |
WO2004061154(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
WO2003JP15776 |
申请日期 |
2003.12.10 |
申请人 |
ULVAC INC.;MIZUNO, EIICHI;GONOHE, NARISHI;HARADA, MASAMICHI;KATO, NOBUYUKI |
发明人 |
MIZUNO, EIICHI;GONOHE, NARISHI;HARADA, MASAMICHI;KATO, NOBUYUKI |
分类号 |
H01L21/285;C23C16/34;(IPC1-7):C23C16/34;C23C16/455;H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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