| 摘要 |
The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance change DeltaR. In the magnetic detecting element, a free magnetic layer or a pinned magnetic layer has a synthetic ferromagnetic structure including a first free magnetic sub-layer or a first pinned magnetic sub-layer comprising a magnetic material having a positive beta value, and a second magnetic sub-layer or a second pinned magnetic sub-layer comprising a magnetic material having a negative beta value. The beta value is characteristics of a magnetic material satisfying the relationship rho↓/rho↑=(1+beta)/(1-beta) (-1<=beta<=1) (wherein rho↓ represents resistivity for minority conduction electrons, and rho↑ represents resistivity for majority conduction electrons).
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