| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric random access memory is provided to simplify manufacturing process by simultaneously forming a metal line contact hole and a capacitor contact hole. CONSTITUTION: A lower electrode(17) is formed on a substrate(10) defined by cell region and peripheral regions. A ferroelectric film(18) is formed on the lower electrode. An upper electrode(30) and an etch stop layer(32) are sequentially formed on the ferroelectric film. An interlayer dielectric(33) is formed on the resultant structure. A metal line contact hole and a capacitor contact hole are simultaneously formed. The etch stop layer exposed by the capacitor contact hole is etched to expose the upper electrode. A metal line(35) is formed to connect the upper electrode through the capacitor contact hole.
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