SEMICONDUCTOR MEMORY DEVICE HAVING STRUCTURE OF PREVENTING DATA DISTORTION ON DATA INPUT/OUTPUT LINE AND METHOD FOR TRANSMITTING MEMORY CELL DATA OF THE SAME

摘要

PURPOSE: A semiconductor memory device having a structure of preventing data distortion on a data input/output line and a method for transmitting memory cell data of the same are provided to prevent the data distortion on the data input/output line by reducing a line resistance of the second data input/output line couple. CONSTITUTION: A semiconductor memory device having a structure of preventing data distortion on a data input/output line includes a couple of data input/output lines, a latch circuit, a switching circuit, a current mirror, and a current sense amplifier. The latch circuit(10) is used for receiving data from a memory cell and latching the received data. The switching circuit is used for transmitting the output data of the latch circuit to the data input/output line in response to a column selection signal. The current mirror(20) is used for sensing the amount of current applied to the data input/output lines and outputting the current corresponding to the amount of sensed current. The current sense amplifier is used for receiving, sensing, and amplifying an output signal of the current mirror.