| 摘要 |
PROBLEM TO BE SOLVED: To recover a metal impurity included in a surface oxide film by a simple method, and to detect it with high sensitility. SOLUTION: This method includes a process for bringing HF vapor 14b into contact with the surface oxide film 13a including the metal impurity formed on the silicon substrate 13 surface, a process for vaporizing moisture and a silicon component from waterdrops 17 including the metal impurity and the silicon component respectively existing on the substrate surface by heating the substrate, a process for dropping dilute acid droplets 24 onto the substrate surface, to thereby spread the droplets on the whole surface and dissolve the metal impurity remaining on the whole surface into the droplets, and recovering the droplets dissolving the metal impurity, and a process for performing quantitative analysis of the metal impurity included in the recovered droplets. COPYRIGHT: (C)2004,JPO&NCIPI
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