| 摘要 |
PURPOSE: A method for cleaning a semiconductor wafer is provided to remove a defect such as a scratch by forming a material layer on the semiconductor wafer and removing particles from a rear side of the semiconductor wafer. CONSTITUTION: A method for cleaning a semiconductor wafer includes a loading process, a process for forming a material layer, a drawing process, and a cleaning process. The loading process is performed to load the semiconductor wafer into a deposition chamber(S200). The process for forming the material layer is performed to form the material layer on the semiconductor wafer by providing a source gas into the deposition chamber(S210). The drawing process is performed to draw the semiconductor wafer from the deposition chamber(S220). The cleaning process is performed to clean a front side and a rear side of the semiconductor wafer by using the deionized water(S230).
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