发明名称 Buffer layers and articles for electronic devices
摘要 Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1-xAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
申请公布号 US6764770(B2) 申请公布日期 2004.07.20
申请号 US20020324883 申请日期 2002.12.19
申请人 UT-BATTELLE, LLC 发明人 PARANTHAMAN MARIAPPAN P.;AYTUG TOLGA;CHRISTEN DAVID K.;FEENSTRA ROELAND;GOYAL AMIT
分类号 B32B9/00;B32B9/04;B32B15/04;H01L39/24;(IPC1-7):B32B15/04 主分类号 B32B9/00
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