| 摘要 |
The present invention is related to a method for forming a hydrogen barrier layer capable of protecting a bottom structure from damages occurring due to hydrogen produced during a semiconductor device fabrication. The method includes the steps of: forming a hafnium vanadium oxide (HfVOx) layer on a substrate structure providing a predetermined semiconductor device structure, the HfVOx layer being used as a hydrogen diffusion barrier layer; and forming an insulation layer on the HfVOx layer.
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