发明名称 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
摘要 |
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
|
申请公布号 |
US6765232(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20020105800 |
申请日期 |
2002.03.26 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
TAKAHASHI TAKASHI;KAMINISHI MORIMASA;SATO SHUNICHI;ITOH AKIHIRO;JIKUTANI NAOTO |
分类号 |
H01L33/00;H01L33/02;H01L33/10;H01L33/32;(IPC1-7):H01L29/04 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|