发明名称 |
Manufacturing method for semiconductor device |
摘要 |
A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.
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申请公布号 |
US6764916(B1) |
申请公布日期 |
2004.07.20 |
申请号 |
US19990408327 |
申请日期 |
1999.09.29 |
申请人 |
HITACHI INT ELECTRIC INC |
发明人 |
FURUKAWA RYOICHI;YOSHIDA TADANORI;TSUNEDA MASAYUKI;INOKUCHI YASUHIRO;TAGAMI SATORU |
分类号 |
C23C16/40;H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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