METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE FOR IMPROVING CAPACITANCE

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device is provided to increase the surface area of a lower electrode by forming the lower electrode like an embossing structure using two-step oxidations. CONSTITUTION: An insulating layer(2), a polysilicone layer(3), and a nitride layer(4) are sequentially formed on a silicon substrate(1). A first oxidation is performed on the resultant structure to break the nitride layer into pieces. A second oxidation is performed on the resultant structure to form an embossing structure thereon. The broken nitride layer pieces are removed therefrom. A lower electrode(5) is formed along the upper surface of the embossing structure.