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发明名称
半导体装置之制造方法
摘要
本发明系在层间绝缘膜上形成:在预定的蚀刻条件下对层间绝缘膜之选择比高于阻剂膜、且在化学机械研磨法中较层间绝缘膜不易研磨之氮化矽膜。该氮化矽膜,系在形成电容器下部电极之化学机械研磨步骤中做为硬遮罩使用以防止层间绝缘膜之高度减少。此外,氮化矽膜,在藉由蚀刻形成孔之步骤中,系做为蚀刻遮罩使用。藉此,可提升电容器之特性。
申请公布号
TW200412663
申请公布日期
2004.07.16
申请号
TW092114663
申请日期
2003.05.30
申请人
瑞萨科技股份有限公司
发明人
松村明
分类号
H01L27/108
主分类号
H01L27/108
代理机构
代理人
洪武雄;陈昭诚
主权项
地址
日本
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