| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor and a semiconductor substrate in which a resistance on the substrate side is lowered and the resistance of an epitaxial growth layer in the upper layer of the substrate side is increased, to provide its manufacturing method and a semiconductor element using the semiconductor. SOLUTION: The semiconductor being composed of a compound single crystal and containing a region having a surface defect density of 1×10<SP>7</SP>/cm<SP>2</SP>or more and a region having the surface defect density of 1/cm<SP>2</SP>or less is used. The semiconductor substrate in which the semiconductor is formed on the substrate is used. The semiconductor element has an electrode having at least one resistive contact, and at least one non-resistive contact. The semiconductor element in which the resistive contact is formed in the high defect-density region of the semiconductor, and the non-resistive contact is formed in the low defect-density region, is used. COPYRIGHT: (C)2004,JPO&NCIPI |
