THIN FILM PRODUCTION SYSTEM, AND CLEANING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To suppress heat generation caused by the reaction between residual gas and cleaning gas as far as possible, and to remove the residual gas in a cleaning method for a thin film production system. SOLUTION: The thin film production system is constituted in such a manner that a silicon-containing film is deposited on a substrate using silicon-containing process gas from a first gas feed part in a reaction chamber. The cleaning method for a thin film is provided with: a step where the first gas feed part feeds the silicon-containing process gas; a step where an exhaust pump exhausts the silicon-containing process gas through an exhaust tube from the reaction chamber; and a step where a second gas feed part feeds reaction gas reacted with the silicon-containing process gas after the feed of the silicon-containing process gas is stopped. The amount of the second halogen-containing gas to be fed is controlled in such a manner that its reaction with the silicon-containing process gas remaining in the reaction chamber after the stop of the feed of the first silicon-containing process gas is completed taking a prescribed time. COPYRIGHT: (C)2004,JPO&NCIPI