发明名称 TREATMENT EQUIPMENT AND TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a treatment equipment and a treatment method capable of preventing the deposition of an undesirable deposit at the side end section of the rear of a semiconductor wafer W without causing much complication of equipment constitution and much lowering of throughput. SOLUTION: A conveyor 110 simultaneously carries the semiconductor wafer W and a covering CR into a first treatment chamber 102a or a second treatment chamber 102b in the state in which the covering CR is placed on the semiconductor wafer W, and places them on a susceptor 121. The semiconductor wafer W is etched and treated under the state in which the covering CR is placed at the peripheral section of the wafer W and the peripheral section of the wafer W is covered. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004200219(A) 申请公布日期 2004.07.15
申请号 JP20020363685 申请日期 2002.12.16
申请人 TOKYO ELECTRON LTD 发明人 SATO TETSUHARU
分类号 B65G49/07;H01L21/3065;H01L21/677;H01L21/68;H01L21/683;(IPC1-7):H01L21/306 主分类号 B65G49/07
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