| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method where, at the time when a TiN film is deposited, and a TiN film is thereafter deposited thereon, film peeling or the like do not occur therebetween even if the TiN film is the one deposited at a low temperature. SOLUTION: The substrate W to be treated is mounted on a mounting stand 52 at the inside of a treatment chamber 51, Ti compound gas and reducing gas are charged from a gas discharge member 60 provided so as to be confronted with the mounting stand 52, and further, plasma is generated inside the treatment chamber 51 to deposit a Ti film on the substrate to be treated by plasma CVD (Chemical Vapor Deposition). In this case, the gas discharge member 60 is heated by a heater 96, and the mounting stand 52 is heated by a heater 55, i.e., they are independently heatable, respectively. The mounting stand 52 is heated by the heater 55 to control the temperature of the substrate W to be treated at 300 to 700°C, and the gas discharge member 60 is heated by the heater 96 to control the temperature thereof at≥450°C. COPYRIGHT: (C)2004,JPO&NCIPI
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