| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can prevent a substrate from cracking at a heat treating time. SOLUTION: A semiconductor wafer W is held in a horizontal attitude by a susceptor 73. Twenty-seven flash lamps FL are arrayed above the susceptor 73. The twenty-seven flash lamps FL are split into a lamp group of an odd number and a lamp group of an even number. The light emitting timing of the twenty-seven flash lamps FL are controlled so that the lamp group of the even number emits a light after 1 to 10 ms is elapsed from the time when the lamp group of the odd number emit a light. Thus, the crack of the semiconductor wafer W at the heat treating time can be prevented even when a finally necessary heat treating temperature is obtained. Further, an instantaneous noise and a sound volume can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI
|
