METHOD FOR FORMING RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a practical method for forming a resist pattern by a PCM (portable comfortable mask) method which can be carried out with electron beams and which uses a specified material as an upper layer material having a high absorption wavelength range to be able to give a mask at the time of exposure of a lower layer and hardly producing a mixing region with the lower layer film.

SOLUTION: The method includes processes of: forming a lower layer photosensitive material film on a substrate; forming an upper layer photosensitive material film containing a substituted or unsubstituted benzene ring or polycyclic condensed aromatic ring or alicyclic skeleton on the lower layer photosensitive material film; exposing a specified region of the upper layer photosensitive material film to electron beams; dissolving and removing the exposed part or the unexposed part of the upper layer photosensitive material film after exposure with an alkali aqueous solution to develop; and irradiating the entire region with the light of 190 to 260 nm wavelengths while using the upper layer photosensitive material film pattern obtained by the above developing process as a mask, and developing to selectively dissolve and remove the exposed part to transfer the pattern of the upper layer photosensitive material film to the lower layer photosensitive material film.

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