发明名称 WAFER-FLATNESS EVALUATION METHOD AND DEVICE FOR IMPLEMENTING THE EVALUATION METHOD; WAFER PRODUCTION METHOD USING THE EVALUATION METHOD, WAFER-QUALITY ENSURING METHOD USING THE EVALUATION METHOD, SEMICONDUCTOR DEVICE PRODUCTION METHOD USING THE EVALUATION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD USING THE WAFER EVALUATED BY THE EVALUATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer-flatness evaluation method whereby the flatnesses present in the surface of a wafer can be evaluated in the state closer to a flatnesses which an exposure device can sense. SOLUTION: The wafer-flatness evaluation method has a process (300) for measuring the front and rear surface shapes of a wafer, a process (301) for partitioning the front and rear surfaces of the wafer into their sites, processes (302, 303, 304, 305) for selecting wafer-flatness calculating ways in response to the positions of the valuing sites, and a process (306) for acquiring the flatnesses present in the surface of the wafer. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004200600(A) 申请公布日期 2004.07.15
申请号 JP20020370502 申请日期 2002.12.20
申请人 TOSHIBA CORP;SHIN ETSU HANDOTAI CO LTD;NIKON CORP 发明人 FUJISAWA TADAHITO;INOUE SOICHI;KOBAYASHI MAKOTO;ICHIKAWA MASASHI;HAGIWARA TSUNEYUKI;KODAMA KENICHI
分类号 H01L21/66;G01B11/30;H01L21/027;H01L21/302;H01L21/461;(IPC1-7):H01L21/66 主分类号 H01L21/66
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