发明名称 |
WAFER-FLATNESS EVALUATION METHOD AND DEVICE FOR IMPLEMENTING THE EVALUATION METHOD; WAFER PRODUCTION METHOD USING THE EVALUATION METHOD, WAFER-QUALITY ENSURING METHOD USING THE EVALUATION METHOD, SEMICONDUCTOR DEVICE PRODUCTION METHOD USING THE EVALUATION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD USING THE WAFER EVALUATED BY THE EVALUATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a wafer-flatness evaluation method whereby the flatnesses present in the surface of a wafer can be evaluated in the state closer to a flatnesses which an exposure device can sense. SOLUTION: The wafer-flatness evaluation method has a process (300) for measuring the front and rear surface shapes of a wafer, a process (301) for partitioning the front and rear surfaces of the wafer into their sites, processes (302, 303, 304, 305) for selecting wafer-flatness calculating ways in response to the positions of the valuing sites, and a process (306) for acquiring the flatnesses present in the surface of the wafer. COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004200600(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20020370502 |
申请日期 |
2002.12.20 |
申请人 |
TOSHIBA CORP;SHIN ETSU HANDOTAI CO LTD;NIKON CORP |
发明人 |
FUJISAWA TADAHITO;INOUE SOICHI;KOBAYASHI MAKOTO;ICHIKAWA MASASHI;HAGIWARA TSUNEYUKI;KODAMA KENICHI |
分类号 |
H01L21/66;G01B11/30;H01L21/027;H01L21/302;H01L21/461;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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