| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method which can enhance the uniformity of a residual film half exposed and make constant a distance between electrodes to be formed, and also to provide substrate processing equipment using the method. SOLUTION: Since a distribution is applied to a developing-solution/resist solubility characteristic in the thickness (depth) direction of resist films (R1, R2), a contrast between one of the layers more soluble to the developer and less soluble thereto in the resist film thickness direction can be provided. Since an affinity material 49 has an affinity with a developing solution 50, the development of the mixed-resist layer R1 containing the affinity material is promoted. The development of the resist layer R2 not containing the affinity material is suppressed, as compared with the development of the layer R1. Even when exposed depths are different as L1, L2 and L3, only the region of the mixed-resist layer R1 is actually developed. COPYRIGHT: (C)2004,JPO&NCIPI |
