发明名称 |
Method for removing conductive residue |
摘要 |
A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.
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申请公布号 |
US2004137749(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20030342087 |
申请日期 |
2003.01.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YING CHENTSAU;CHEN XIAOYI;YAN CHUN;KUMAR AJAY |
分类号 |
H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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