发明名称 Method for removing conductive residue
摘要 A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.
申请公布号 US2004137749(A1) 申请公布日期 2004.07.15
申请号 US20030342087 申请日期 2003.01.13
申请人 APPLIED MATERIALS, INC. 发明人 YING CHENTSAU;CHEN XIAOYI;YAN CHUN;KUMAR AJAY
分类号 H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/3213
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